Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber

by Kwang Hong Lee, Adam Jandl, Yew Heng Tan, Eugene A. Fitzgerald, Chuan Seng Tan
Published 2013-09-01

Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient

by Kwang Hong Lee, Shuyu Bao, Gang Yih Chong, Yew Heng Tan, Eugene A. Fitzgerald, Chuan Seng Tan
Published 2015-01-01

Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

by Kwang Hong Lee, Shuyu Bao, Bing Wang, Cong Wang, Soon Fatt Yoon, Jurgen Michel, Eugene A. Fitzgerald, Chuan Seng Tan
Published 2016-02-01

Monolithic Integration of Si-CMOS and III-V-on-Si Through Direct Wafer Bonding Process

by Kwang Hong Lee, Yue Wang, Bing Wang, Li Zhang, Wardhana Aji Sasangka, Shuh Chin Goh, Shuyu Bao, Kenneth E. Lee, Eugene A. Fitzgerald, Chuan Seng Tan
Published 2018-01-01

Low-threshold optically pumped lasing in highly strained germanium nanowires

by Shuyu Bao, Daeik Kim, Chibuzo Onwukaeme, Shashank Gupta, Krishna Saraswat, Kwang Hong Lee, Yeji Kim, Dabin Min, Yongduck Jung, Haodong Qiu, Hong Wang, Eugene A. Fitzgerald, Chuan Seng Tan, Donguk Nam
Published 2017-11-01

Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

by David Kohen, Xuan Sang Nguyen, Sachin Yadav, Annie Kumar, Riko I Made, Christopher Heidelberger, Xiao Gong, Kwang Hong Lee, Kenneth Eng Kian Lee, Yee Chia Yeo, Soon Fatt Yoon, Eugene A. Fitzgerald
Published 2016-08-01

High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers

by Loke Wan Khai, Wang Yue, Lee Kwang Hong, Liu Zhihong, Xie Hanlin, Chiah Siau Ben, Kenneth Lee Eng Kian, Zhou Xing, Chuan Seng Tan, Ng Geok Ing, Eugene A. Fitzgerald, Yoon Soon Fatt
Published 2020-01-01

Dislocation engineering in InAlGaAs/SiGe alloy systems for heteroepitaxial integration

by Shah, Rushabh(Rushabh Dinesh)
Published 2019

Growth and characterization of high quality relaxed graded silicon germanium layers for integrated photodetectors

by Samavedam, Srikanth B. (Srikanth Balaji), 1970-
Published 2005

Integration of III-V optical devices and interconnects on Si using SiGe virtual substrates

by Yang, Vicky Kung-Fan, 1975-
Published 2005

Lattice-mismatched epitaxy of AlInP and characterization of its microstructure and luminescence

by Mukherjee, Kunal, Ph. D. Massachusetts Institute of Technology
Published 2017

GaAsP/InGaP heterojunction bipolar transistors for III-V on Si microelectronics

by Heidelberger, Christopher
Published 2018

Fabricating silicon germanium waveguides by low pressure chemical vapor deposition

by Berlin, Dean Edward, 1978-
Published 2005

Epitaxial Ge/Il-V Heterostructures : MOCVD growth, characterization, and applications

by Bai, Yu, Ph.D. Massachusetts Institute of Technology
Published 2012

High quality metamorphic graded buffers with lattice-constants intermediate to GaAs an InP for device applications

by Lee, Kenneth Eng Kian
Published 2009

Substrate engineering for monolithic integration of III-V semiconductors with Si CMOS technology

by Dohrman, Carl Lawrence
Published 2009

Integration of GaAsP alloys on SiGe virtual substrates for Si-based dual-junction solar cells

by Sharma, Prithu
Published 2014

Technological assessment of silicon on lattice engineered substrate (SOLES) for optical applications

by Leung, Man Yin
Published 2009

Monolithic integration of III-V semiconductor materials and devices with silicon

by Ting, Steve M. (Steve Ming), 1973-
Published 2005

III-V compositionally graded buffers for heterostructure integration

by Jandl, Adam Christopher
Published 2015