Foreword Special Issue on Transistors With Steep Subthreshold Swing for Low-Power Electronics

by David Esseni, Adrian M. Ionescu, Alan Seabaugh, Yee-Chia Yeo
Published 2015-01-01

Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1−x Sn x ) Fin Structure

by Wei Wang, Dian Lei, Yuan Dong, Xiao Gong, Eng Soon Tok, Yee-Chia Yeo
Published 2017-05-01

High-Performance InAs Gate-All-Around Nanowire MOSFETs on 300 mm Si Substrates

by Gerben Doornbos, Martin Holland, Georgios Vellianitis, Mark J. H. Van Dal, Blandine Duriez, Richard Oxland, Aryan Afzalian, Ta-Kun Chen, Gordon Hsieh, Matthias Passlack, Yee-Chia Yeo
Published 2016-01-01

Strain relaxation of germanium-tin (GeSn) fins

by Yuye Kang, Yi-Chiau Huang, Kwang Hong Lee, Shuyu Bao, Wei Wang, Dian Lei, Saeid Masudy-Panah, Yuan Dong, Ying Wu, Shengqiang Xu, Chuan Seng Tan, Xiao Gong, Yee-Chia Yeo
Published 2018-02-01

Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

by David Kohen, Xuan Sang Nguyen, Sachin Yadav, Annie Kumar, Riko I Made, Christopher Heidelberger, Xiao Gong, Kwang Hong Lee, Kenneth Eng Kian Lee, Yee Chia Yeo, Soon Fatt Yoon, Eugene A. Fitzgerald
Published 2016-08-01