Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process

by Lee, Kwang Hong, Bao, Shuyu, Zhang, Li, Kohen, David, Fitzgerald, Eugene A, Tan, Chuan Seng
Published 2020

Erratum to: Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut

by Tan, Yew Heng, Lee, Kwang Hong, Jandl, Adam Christopher, Fitzgerald, Eugene A, Tan, Chuan Seng
Published 2016

Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut

by Tan, Yew Heng, Lee, Kwang Hong, Jandl, Adam Christopher, Fitzgerald, Eugene A, Tan, Chuan Seng
Published 2016

Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient

by Lee, Kwang Hong, Bao, Shuyu, Chong, Gang Yih, Tan, Yew Heng, Fitzgerald, Eugene A., Tan, Chuan Seng
Published 2016

The role of AsH[subscript 3] partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD ? Application to a 200mm GaAs virtual substrate

by Kohen, David, Bao, Shuyu, Lee, Kwang Hong, Lee, Kenneth Eng Kian, Tan, Chuan Seng, Yoon, Soon Fatt, Fitzgerald, Eugene A
Published 2017

Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

by Lee, Kwang Hong, Bao, Shuyu, Wang, Bing, Wang, Cong, Yoon, Soon Fatt, Tan, Chuan Seng, Michel, Jurgen, Fitzgerald, Eugene A
Published 2017

Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates

by Wang, Bing, Wang, Cong, Lee, Kwang Hong, Bao, Shuyu, Lee, Kenneth Eng Kian, Tan, Chuan Seng, Yoon, Soon Fatt, Michel, Jurgen, Fitzgerald, Eugene A
Published 2017

Low-threshold optically pumped lasing in highly strained germanium nanowires

by Bao, Shuyu, Kim, Daeik, Onwukaeme, Chibuzo, Gupta, Shashank, Saraswat, Krishna, Lee, Kwang Hong, Kim, Yeji, Min, Dabin, Jung, Yongduck, Qiu, Haodong, Wang, Hong, Fitzgerald, Eugene A, Tan, Chuan Seng, Nam, Donguk
Published 2020

Heteroepitaxial growth of In In[subscript 0.30]Ga[subscript 0.70]As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

by Kohen, David, Nguyen, Xuan Sang, Yadav, Sachin, Kumar, Annie, Made, Riko I, Heidelberger, Christopher, Gong, Xiao, Lee, Kwang Hong, Lee, Kenneth Eng Kian, Yeo, Yee Chia, Yoon, Soon Fatt, Fitzgerald, Eugene A.
Published 2017

The integration of InGaP LEDs with CMOS on 200 mm silicon wafers

by Wang, Bing, Lee, Kwang Hong, Wang, Cong, Wang, Yue, Made, Riko I., Sasangka, Wardhana Aji, Nguyen, Viet Cuong, Lee, Kenneth Eng Kian, Tan, Chuan Seng, Yoon, Soon Fatt, Fitzgerald, Eugene A, Michel, Jurgen
Published 2017