Interplay Effect of Excitation and Temperature on Carrier Transfer between Vertically Aligned InAs/GaAs Quantum Dot Pairs

Interplay Effect of Excitation and Temperature on Carrier Transfer between Vertically Aligned InAs/GaAs Quantum Dot Pairs

Carrier transfer in vertically-coupled InAs/GaAs quantum dot (QD) pairs is investigated. Photoluminescence (PL) and PL excitation spectra measured at low temperature indicate that the PL peak intensity ratio between the emission from the two sets of QDs—i.e., the relative population of carriers betw...

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Bibliographic Details
Main Authors: Yao Liu, Ying Wang, Baolai Liang, Qinglin Guo, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo
Format: Article
Language:English
Published: MDPI AG 2016-11-01
Series:Crystals
Subjects:
photoluminescence
self-assembled quantum dots
carrier transfer
semiconductor
Online Access:http://www.mdpi.com/2073-4352/6/11/144

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http://www.mdpi.com/2073-4352/6/11/144

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