Nanoscale footprints of self-running gallium droplets on GaAs surface.

by Jiang Wu, Zhiming M Wang, Alvason Z Li, Mourad Benamara, Shibin Li, Gregory J Salamo
Published 2011-01-01

Effect of indium accumulation on the growth and properties of ultrathin In(Ga)N/GaN quantum wells

by Chen Li, Yurii Maidaniuk, Andrian V. Kuchuk, Yuriy I. Mazur, Mourad Benamara, Morgan E. Ware, Gregory J. Salamo
Published 2020-05-01

Toward Single Atom Chains with Exfoliated Tellurium

by Hugh O. H. Churchill, Gregory J. Salamo, Shui-Qing Yu, Takayuki Hironaka, Xian Hu, Jeb Stacy, Ishiang Shih
Published 2017-08-01

Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate

by Siming Chen, Mingchu Tang, Jiang Wu, Qi Jiang, Vitaliy Dorogan, Mourad Benamara, Yuriy I. Mazur, Gregory J. Salamo, Huiyun Liu
Published 2015-06-01

Interplay Effect of Excitation and Temperature on Carrier Transfer between Vertically Aligned InAs/GaAs Quantum Dot Pairs

by Yao Liu, Ying Wang, Baolai Liang, Qinglin Guo, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo
Published 2016-11-01

Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots

by Qing Yuan, Baolai Liang, Chuan Zhou, Ying Wang, Yingnan Guo, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo
Published 2018-11-01

Near Infrared Quantum Cutting Luminescence of Er3+/Tm3+ Ion Pairs in a Telluride Glass

by Xiaobo Chen, Song Li, Lili Hu, Kezhi Wang, Guoying Zhao, Lizhu He, Jinying Liu, Chunlei Yu, Jingfu Tao, Wei Lin, Guojian Yang, Gregory J. Salamo
Published 2017-05-01

Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness

by Ying Wang, Xinzhi Sheng, Qinglin Guo, Xiaoli Li, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Yurii Maidaniuk, Morgan E. Ware, Gregory J. Salamo, Baolai Liang, Diana L. Huffaker
Published 2017-03-01

Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

by Zhaoquan Zeng, Timothy A. Morgan, Dongsheng Fan, Chen Li, Yusuke Hirono, Xian Hu, Yanfei Zhao, Joon Sue Lee, Jian Wang, Zhiming M. Wang, Shuiqing Yu, Michael E. Hawkridge, Mourad Benamara, Gregory J. Salamo
Published 2013-07-01

Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

by Bogdan I. Tsykaniuk, Andrii S. Nikolenko, Viktor V. Strelchuk, Viktor M. Naseka, Yuriy I. Mazur, Morgan E. Ware, Eric A. DeCuir, Bogdan Sadovyi, Jan L. Weyher, Rafal Jakiela, Gregory J. Salamo, Alexander E. Belyaev
Published 2017-06-01

Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

by Bogdan I. Tsykaniuk, Andrii S. Nikolenko, Viktor V. Strelchuk, Viktor M. Naseka, Yuriy I. Mazur, Morgan E. Ware, Eric A. DeCuir, Bogdan Sadovyi, Jan L. Weyher, Rafal Jakiela, Gregory J. Salamo, Alexander E. Belyaev
Published 2017-08-01