Effect of indium accumulation on the growth and properties of ultrathin In(Ga)N/GaN quantum wells

by Chen Li, Yurii Maidaniuk, Andrian V. Kuchuk, Yuriy I. Mazur, Mourad Benamara, Morgan E. Ware, Gregory J. Salamo
Published 2020-05-01

Interplay Effect of Excitation and Temperature on Carrier Transfer between Vertically Aligned InAs/GaAs Quantum Dot Pairs

by Yao Liu, Ying Wang, Baolai Liang, Qinglin Guo, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo
Published 2016-11-01

Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots

by Qing Yuan, Baolai Liang, Chuan Zhou, Ying Wang, Yingnan Guo, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo
Published 2018-11-01

Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness

by Ying Wang, Xinzhi Sheng, Qinglin Guo, Xiaoli Li, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Yurii Maidaniuk, Morgan E. Ware, Gregory J. Salamo, Baolai Liang, Diana L. Huffaker
Published 2017-03-01

Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

by Bogdan I. Tsykaniuk, Andrii S. Nikolenko, Viktor V. Strelchuk, Viktor M. Naseka, Yuriy I. Mazur, Morgan E. Ware, Eric A. DeCuir, Bogdan Sadovyi, Jan L. Weyher, Rafal Jakiela, Gregory J. Salamo, Alexander E. Belyaev
Published 2017-06-01

Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

by Bogdan I. Tsykaniuk, Andrii S. Nikolenko, Viktor V. Strelchuk, Viktor M. Naseka, Yuriy I. Mazur, Morgan E. Ware, Eric A. DeCuir, Bogdan Sadovyi, Jan L. Weyher, Rafal Jakiela, Gregory J. Salamo, Alexander E. Belyaev
Published 2017-08-01