First-principles Simulations of Tunneling FETs Based on van der Waals MoTe2/SnS2 Heterojunctions with Gate-to-drain Overlap Design

by Kun Luo, Kui Gong, Jiangchai Chen, Shengli Zhang, Yongliang Li, Huaxiang Yin, Zhenhua Wu
Published 2020-12-01

Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor

by Gangping Yan, Jinshun Bi, Gaobo Xu, Kai Xi, Bo Li, Linjie Fan, Huaxiang Yin
Published 2020-01-01

Influence of Applied Stress on the Ferroelectricity of Thin Zr-Doped HfO₂ Films

by Yuwei Cai, Qingzhu Zhang, Zhaohao Zhang, Gaobo Xu, Zhenhua Wu, Jie Gu, Junjie Li, Jinjuan Xiang, Huaxiang Yin
Published 2021-05-01

Fabrication and Characterization of a Novel Si Line Tunneling TFET With High Drive Current

by Weijun Cheng, Renrong Liang, Gaobo Xu, Guofang Yu, Shuqin Zhang, Huaxiang Yin, Chao Zhao, Tian-Ling Ren, Jun Xu
Published 2020-01-01

Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si_0.45Ge_0.55, Ge Gate-All-Around NSFET for 5 nm Technology Node

by Jiaxin Yao, Jun Li, Kun Luo, Jiahan Yu, Qingzhu Zhang, Zhaozhao Hou, Jie Gu, Wen Yang, Zhenhua Wu, Huaxiang Yin, Wenwu Wang
Published 2018-01-01

Novel 10-nm Gate Length MoS₂ Transistor Fabricated on Si Fin Substrate

by Yu Pan, Huaxiang Yin, Kailiang Huang, Zhaohao Zhang, Qingzhu Zhang, Kunpeng Jia, Zhenhua Wu, Kun Luo, Jiahan Yu, Junfeng Li, Wenwu Wang, Tianchun Ye
Published 2019-01-01

pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology

by Guilei Wang, Jun Luo, Jinbiao Liu, Tao Yang, Yefeng Xu, Junfeng Li, Huaxiang Yin, Jiang Yan, Huilong Zhu, Chao Zhao, Tianchun Ye, Henry H. Radamson
Published 2017-04-01

Alleviation of Negative-Bias Temperature Instability in Si p-FinFETs With ALD W Gate-Filling Metal by Annealing Process Optimization

by Longda Zhou, Qianqian Liu, Hong Yang, Zhigang Ji, Hao Xu, Guilei Wang, Eddy Simoen, Haojie Jiang, Ying Luo, Zhenzhen Kong, Guobin Bai, Jun Luo, Huaxiang Yin, Chao Zhao, Wenwu Wang
Published 2021-01-01

Fabrication of Low Cost and Low Temperature Poly-Silicon Nanowire Sensor Arrays for Monolithic Three-Dimensional Integrated Circuits Applications

by Siqi Tang, Jiang Yan, Jing Zhang, Shuhua Wei, Qingzhu Zhang, Junjie Li, Min Fang, Shuang Zhang, Enyi Xiong, Yanrong Wang, Jianglan Yang, Zhaohao Zhang, Qianhui Wei, Huaxiang Yin, Wenwu Wang, Hailing Tu
Published 2020-12-01

Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

by Jie Gu, Qingzhu Zhang, Zhenhua Wu, Jiaxin Yao, Zhaohao Zhang, Xiaohui Zhu, Guilei Wang, Junjie Li, Yongkui Zhang, Yuwei Cai, Renren Xu, Gaobo Xu, Qiuxia Xu, Huaxiang Yin, Jun Luo, Wenwu Wang, Tianchun Ye
Published 2021-01-01

Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices

by Qingzhu Zhang, Jie Gu, Renren Xu, Lei Cao, Junjie Li, Zhenhua Wu, Guilei Wang, Jiaxin Yao, Zhaohao Zhang, Jinjuan Xiang, Xiaobin He, Zhenzhen Kong, Hong Yang, Jiajia Tian, Gaobo Xu, Shujuan Mao, Henry H. Radamson, Huaxiang Yin, Jun Luo
Published 2021-03-01

A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm

by Junjie Li, Yongliang Li, Na Zhou, Guilei Wang, Qingzhu Zhang, Anyan Du, Yongkui Zhang, Jianfeng Gao, Zhenzhen Kong, Hongxiao Lin, Jinjuan Xiang, Chen Li, Xiaogen Yin, Yangyang Li, Xiaolei Wang, Hong Yang, Xueli Ma, Jianghao Han, Jing Zhang, Tairan Hu, Tao Yang, Junfeng Li, Huaxiang Yin, Huilong Zhu, Wenwu Wang, Henry H. Radamson
Published 2020-02-01

Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors

by Junjie Li, Yongliang Li, Na Zhou, Wenjuan Xiong, Guilei Wang, Qingzhu Zhang, Anyan Du, Jianfeng Gao, Zhenzhen Kong, Hongxiao Lin, Jinjuan Xiang, Chen Li, Xiaogen Yin, Xiaolei Wang, Hong Yang, Xueli Ma, Jianghao Han, Jing Zhang, Tairan Hu, Zhe Cao, Tao Yang, Junfeng Li, Huaxiang Yin, Huilong Zhu, Jun Luo, Wenwu Wang, Henry H. Radamson
Published 2020-04-01