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Fiedler, A.
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Fiedler, A.
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Si doping in MOCVD grown (010) β-(AlxGa1-x)2O3thin films
by
Bhuiyan, A.F.M.A.U
,
Feng, Z.
,
Fiedler
,
A
.
,
Huang, H.-L
,
Hwang, J.
,
Meng, L.
,
Mou, S.
,
Neal, A.T
,
Rajan, S.
,
Steinbrunner, E.
,
Zhao, H.
Published 2022
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Related Subjects
Al composition
Carrier concentration
Chemical vapor deposited
Gallium compounds
Hall mobility
High al
Lattice mismatch
Lows-temperatures
Metallorganic chemical vapor deposition
Metalorganics
Secondary ion mass spectrometry
Secondary ion mass spectroscopy
Semiconductor doping
Si-doping
Structural and electrical properties
Substrates
Temperature
Thin films
Thin-films
β -Ga2O3
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