Modeling and PSPICE simulation of NBTI effects in VDMOS transistors

by Marjanović Miloš, Danković Danijel, Prijić Aneta, Prijić Zoran, Janković Nebojša, Davidović Vojkan
Published 2015-01-01

Effects of gate bias stressing in power vdmosfets

by Stojadinović Ninoslav, Manić Ivica, Davidović Vojkan, Danković Danijel, Đorić-Veljković Snežana M., Golubović Snežana, Dimitrijev S.
Published 2003-01-01

The comparison of gamma-radiation and electrical stress influences on oxide and interface defects in power VDMOSFET

by Đorić-Veljković Snežana M., Manić Ivica Đ., Davidović Vojkan S., Danković Danijel M., Golubović Snežana M., Stojadinović Ninoslav D.
Published 2013-01-01

Annealing of radiation-induced defects in burn-in stressed power VDMOSFETs

by Đorić-Veljković Snežana M., Manić Ivica Đ., Davidović Vojkan S., Danković Danijel M., Golubović Snežana M., Stojadinović Ninoslav D.
Published 2011-01-01