A Compact Model for SiC Schottky Barrier Diodes Based on the Fundamental Current Mechanisms

by Jordan R. Nicholls, Sima Dimitrijev
Published 2020-01-01

Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method

by Mayank Chaturvedi, Sima Dimitrijev, Hamid Amini Moghadam, Daniel Haasmann, Peyush Pande, Utkarsh Jadli
Published 2021-01-01

Direct Measurement of Active Near-Interface Traps in the Strong-Accumulation Region of 4H-SiC MOS Capacitors

by Peyush Pande, Sima Dimitrijev, Daniel Haasmann, Hamid Amini Moghadam, Philip Tanner, Jisheng Han
Published 2018-01-01

Modeling Power GaN-HEMTs Using Standard MOSFET Equations and Parameters in SPICE

by Utkarsh Jadli, Faisal Mohd-Yasin, Hamid Amini Moghadam, Peyush Pande, Mayank Chaturvedi, Sima Dimitrijev
Published 2021-01-01

A Method for Selection of Power MOSFETs to Minimize Power Dissipation

by Utkarsh Jadli, Faisal Mohd-Yasin, Hamid Amini Moghadam, Peyush Pande, Mayank Chaturvedi, Sima Dimitrijev
Published 2021-09-01

Effects of gate bias stressing in power vdmosfets

by Stojadinović Ninoslav, Manić Ivica, Davidović Vojkan, Danković Danijel, Đorić-Veljković Snežana M., Golubović Snežana, Dimitrijev S.
Published 2003-01-01

Measurement of Power Dissipation Due to Parasitic Capacitances of Power MOSFETs

by Utkarsh Jadli, Faisal Mohd-Yasin, Hamid Amini Moghadam, Peyush Pande, Jordan R. Nicholls, Sima Dimitrijev
Published 2020-01-01

The Correct Equation for the Current Through Voltage-Dependent Capacitors

by Utkarsh Jadli, Faisal Mohd-Yasin, Hamid Amini Moghadam, Jordan R. Nicholls, Peyush Pande, Sima Dimitrijev
Published 2020-01-01

Self-aligned graphene on silicon substrates as ultimate metal replacement for nanodevices

by Iacopi, Francesca, Mishra, N., Cunning, B.V., Kermany, A.R., Goding, D., Pradeepkumar, A., Dimitrijev, S., Boeckl, J.J., Brock, R., Dauskardt, R.H.
Published 2016