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Bukhori, MF
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Bukhori, MF
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Bukhori, MF
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1
Impact of different NBTI defect components on sub-threshold operation of high-k p-MOSFET
by
Bukhori
,
MF
,
Hatta, SWM
,
Hussin, H
,
Soin, N
Published 2015
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2
Effects of Gate Stack Structural and Process Defectivity on High-k Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs
by
Bukhori
,
MF
,
Hatta, SWM
,
Hussin, H
,
Soin, N
,
Wahab, YA
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3
Effects of gate stack structural and process defectivity on high- k dielectric dependence of nbti reliability in 32 nm technology node PMOSFETs
by
Abdul Wahab, Y.
,
Bukhori
,
M.F
,
Hussin, H.
,
Soin, N.
,
Wan Muhamad Hatta, S.
Published 2014
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4
Impact of different NBTI defect components on sub-threshold operation of high-k p-MOSFET
by
Bukhori
,
M.F
,
Herman S.H
,
Hussin, H.
,
Muhamad Hatta, S.W
,
Soin, N.
Published 2015
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Related Subjects
Article
Defect mechanisms
Defects
ENERGY-DISTRIBUTION
Electronic equipment
Energy profiling approach
GENERATION
Integrated circuits
MECHANISMS
MOSFET devices
PERFORMANCE
POSITIVE CHARGES
Positive charges
STRESS
Subthreshold operation
Temperature dependence
Temperature distribution
Thermally activated
Thermoelectric equipment
Threshold elements
Threshold voltage
Threshold voltage shifts
Time exponent
degradation
density
dipole
electric field
electric potential
electrical parameters
field effect transistor
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