The Effects of Annealing Temperatures on Composition and Strain in SixGe(1-x) Obtained by Melting Growth of Electrodeposited Ge on Si (100)

The Effects of Annealing Temperatures on Composition and Strain in SixGe(1-x) Obtained by Melting Growth of Electrodeposited Ge on Si (100)

Show other versions (1)

The effects of annealing temperatures on composition and strain in SixGe1-x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 degrees C for 1 s. All annealed samples sho...

Full description

Bibliographic Details
Main Authors: Abidin, MSZ (Author), Anisuzzaman, M (Author), Chikita, H (Author), Hashim, AM (Author), Kinoshita, Y (Author), Mahmood, MR (Author), Matsumura, R (Author), Morshed, T (Author), Muta, S (Author), Park, JH (Author), Sadoh, T (Author)
Format: Article
Language:English
Online Access:View Fulltext in Publisher

Internet

View Fulltext in Publisher

Similar Items