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Anisuzzaman, M
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Anisuzzaman, M
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Anisuzzaman, M
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1
Crystallization of Electrodeposited Germanium Thin Film on Silicon (100)
by
Abidin, MSZ
,
Anisuzzaman
,
M
,
Hashim, AM
,
Mahmood, MR
,
Matsumura, R
,
Muta, S
,
Park, JH
,
Sadoh, T
Call Number:
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2
Crystallization of electrodeposited germanium thin film on silicon (100)
by
Abidin, M.S.Z
,
Anisuzzaman
,
M
.
,
Hashim, A.M
,
Mahmood, M.R
,
Matsumura, R.
,
Muta, S.
,
Park, J.-H
,
Sadoh, T.
Call Number:
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3
The Effects of Annealing Temperatures on Composition and Strain in SixGe(1-x) Obtained by Melting Growth of Electrodeposited Ge on Si (100)
by
Abidin, MSZ
,
Anisuzzaman
,
M
,
Chikita, H
,
Hashim, AM
,
Kinoshita, Y
,
Mahmood, MR
,
Matsumura, R
,
Morshed, T
,
Muta, S
,
Park, JH
,
Sadoh, T
Call Number:
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4
The effects of annealing temperatures on composition and strain in SixGe1-x obtained by melting growth of electrodeposited Ge on Si (100)
by
Abidin, M.S.Z
,
Anisuzzaman
,
M
.
,
Chikita, H.
,
Hashim, A.M
,
Kinoshita, Y.
,
Mahmood, M.R
,
Matsumura, R.
,
Morshed, T.
,
Muta, S.
,
Park, J.-H
,
Sadoh, T.
Call Number:
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Related Subjects
Electrochemical deposition
Germanium
Rapid melting
Silicon
Auger electron spectroscopies (AES)
Auger electron spectroscopy
Chlorine compounds
Crystal qualities
Device application
Electrodeposition
Electron backscattering diffraction
Equilibrium phase diagrams
Interfaces (materials)
Propylene glycols
Raman scattering
Rapid thermal annealing
Rapid thermal annealing (RTA)
Reduction
Thin films
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