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|a Benson, James
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|a D'Halleweyn, Nele V.
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|a Redman-White, William
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|a Easson, Craig A.
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|a Uren, Michael J.
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|a Faynot, Olivier
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|a Pelloie, Jean-Luc
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|a A Physically Based Relation Between Extracted Threshold Voltage and Surface Potential Flat-Band Voltage for MOSFET Compact Modeling
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|c 2001-05.
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|z Get fulltext
|u https://eprints.soton.ac.uk/260654/1/TRED_SOIVT_May0111.pdf
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|a Compact MOS models based on surface potential are now firmly established, but for practical applications there is no reliable link between measured values of threshold voltage and the flat-band voltage on which such models are based. This brief presents an analytical relationship which may be implemented in compact models to provide a reliable and accurate threshold parameter input. Results are compared with a conventional threshold voltage model for several SOI CMOS technologies. This technique has been developed for use with body-tied SOI transistors, and hence it can also be applied to bulk devices.
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