A Physically Based Relation Between Extracted Threshold Voltage and Surface Potential Flat-Band Voltage for MOSFET Compact Modeling
Compact MOS models based on surface potential are now firmly established, but for practical applications there is no reliable link between measured values of threshold voltage and the flat-band voltage on which such models are based. This brief presents an analytical relationship which may be implem...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2001-05.
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| Subjects: | |
| Online Access: | Get fulltext |