A Physically Based Relation Between Extracted Threshold Voltage and Surface Potential Flat-Band Voltage for MOSFET Compact Modeling

by Benson, James, D'Halleweyn, Nele V., Redman-White, William, Easson, Craig A., Uren, Michael J., Faynot, Olivier, Pelloie, Jean-Luc
Published 2001

The 2018 GaN power electronics roadmap

by Amano, H, Baines, Y, Beam, E, Borga, Matteo, Bouchet, T, Chalker, Paul R, Charles, M, Chen, Kevin J, Chowdhury, Nadim, Chu, Rongming, De Santi, Carlo, De Souza, Maria Merlyne, Decoutere, Stefaan, Di Cioccio, L, Eckardt, Bernd, Egawa, Takashi, Fay, P, Freedsman, Joseph J, Guido, L, Häberlen, Oliver, Haynes, Geoff, Heckel, Thomas, Hemakumara, Dilini, Houston, Peter, Hua, Mengyuan, Huang, Qingyun, Huang, Alex, Jiang, Sheng, Kawai, H, Kinzer, Dan, Kuball, Martin, Kumar, Ashwani, Lee, Kean Boon, Li, Xu, Marcon, Denis, März, Martin, McCarthy, R, Meneghesso, Gaudenzio, Meneghini, Matteo, Morvan, E, Nakajima, A, Narayanan, E. M. S., Oliver, Stephen, Plissonnier, M, Reddy, R, Thayne, Iain, Torres, A, Trivellin, Nicola, Unni, V, Uren, Michael J, Van Hove, Marleen, Wallis, David J, Wang, J, Xie, J, Yagi, S, Yang, Shu, Youtsey, C, Yu, Ruiyang, Zanoni, Enrico, Zeltner, Stefan, Hu, Jie, Palacios, Tomas, Piedra, Daniel, Sun, Min, Zhang, Yuhao
Published 2018