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03979nam a2200625Ia 4500 |
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10.1109-JPHOTOV.2022.3169985 |
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220630s2022 CNT 000 0 und d |
| 020 |
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|a 21563381 (ISSN)
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| 245 |
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|a Improving ALD-Al<formula><tex>
|_ 2
|< /tex></formula>O<formula><tex>
|_ 3
|< /tex></formula> Surface Passivation of Si Utilizing Pre-Existing SiO<formula><tex>
|_ {\text{x}}
|< /tex></formula>
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|b IEEE Electron Devices Society
|c 2022
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|a Al<formula><tex>
|_ 2
|< /tex></formula>O<formula><tex>
|_ 3
|< /tex></formula> has rapidly become the surface passivation material of choice for p+ layers of solar cells because of its high negative fixed charge, good long-term and thermal stability, and no parasitic absorption. In this article, the surface saturation current density, fixed charge, and interface state density are compared for Al<formula><tex>
|_ 2
|< /tex></formula>O<formula><tex>
|_ 3
|< /tex></formula> deposited on Si substrates where the pre-existing out-of-the-box SiO<formula><tex>
|_ {\text{x}}
|< /tex></formula> layer was not removed, with substrates where the SiO<formula><tex>
|_ {\text{x}}
|< /tex></formula> was removed by hydrofluoric acid. The depositions are performed by atomic layer deposition at temperatures in the 150–300 °C range, using trimethylaluminium, H<formula><tex>
|_ 2
|< /tex></formula>O, and O<formula><tex>
|_ 3
|< /tex></formula> as precursors. The samples where the native oxide was not removed achieve a higher level of surface passivation for every tested deposition temperature, with the sample deposited at 200 °C exhibiting a surface saturation current density of only 0.9 fA/cm2 after annealing, a fixed charge of −4.2 × 1012 cm−2, and a density of interface states of 9.8 × 109 cm−2 eV−1. Capacitance and conductance voltage characteristics reveal a strong correlation between the surface saturation current density and the density of interface states and fixed charges. It is also determined that the long-term stability of the surface passivation depends on the deposition temperature, with higher deposition temperatures resulting in improved long-term stability. The results indicate that H-terminated Si prior to Al<formula><tex>
|_ 2
|< /tex></formula>O<formula><tex>
|_ 3
|< /tex></formula> deposition may have a detrimental effect on the surface passivation. Author
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|a Al2o3 growth rate
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|a Al2O3 growth rate
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|a Alumina
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|a Aluminum
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|a Aluminum oxide
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|a Annealing
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|a Atomic layer deposition
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|a Current density
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|a Deposition temperatures
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|a effect of HF-dip
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|a Effect of HF-dip
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|a Growth rate
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|a Hafnium oxides
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|a Hydrofluoric acid
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|a Interface states
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|a Long term stability
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|a long-term stability Al2O3
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|a Long-term stability al2o3
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|a optimal deposition temperature Al2O3
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|a Optimal deposition temperature al2o3
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|a out-of-the-box silicon oxide
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|a Out-of-the-box silicon oxide
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|a Passivation
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|a Passivation
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|a Plasma stability
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|a Plasma temperature
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|a Plasma temperature
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|a Silicon
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|a Silicon oxides
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|a Substrates
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|a Substrates
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|a surface passivation
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|a Surface passivation
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|a Temperature measurement
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|a Temperature measurement
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|a Thermal stability
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|a Thermodynamic stability
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|a TMA + o3 + H2O ALD
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|a TMA + O3 + H2O ALD
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1 |
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|a Getz, M.N.
|e author
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1 |
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|a Monakhov, E.
|e author
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|a Povoli, M.
|e author
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| 773 |
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|t IEEE Journal of Photovoltaics
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| 856 |
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|z View Fulltext in Publisher
|u https://doi.org/10.1109/JPHOTOV.2022.3169985
|
