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Bibliographic Details
Main Authors:	Getz, M.N (Author), Monakhov, E. (Author), Povoli, M. (Author)
Format:	Article
Language:	English
Published:	IEEE Electron Devices Society 2022
Subjects:	Al2o3 growth rate Al2O3 growth rate Alumina Aluminum Aluminum oxide Annealing Atomic layer deposition Current density Deposition temperatures effect of HF-dip Effect of HF-dip Growth rate Hafnium oxides Hydrofluoric acid Interface states Long term stability long-term stability Al2O3 Long-term stability al2o3 optimal deposition temperature Al2O3 Optimal deposition temperature al2o3 out-of-the-box silicon oxide Out-of-the-box silicon oxide Passivation Plasma stability Plasma temperature Silicon Silicon oxides Substrates surface passivation Surface passivation Temperature measurement Thermal stability Thermodynamic stability TMA + o3 + H2O ALD TMA + O3 + H2O ALD
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