Logarithmic trapping and detrapping in β-Ga2O3MOSFETs: Experimental analysis and modeling

• Main Authors: Brusaterra, E. (Author), De Santi, C. (Author), Fregolent, M. (Author), Meneghesso, G. (Author), Meneghini, M. (Author), Tetzner, K. (Author), Würfl, J. (Author), Zanoni, E. (Author)
• Format: Article
• Language: English
• Published: American Institute of Physics Inc. 2022
• Subjects: Alumina; Aluminum oxide; Analysis and models; Border traps; Capacitance; Computer circuits; De-trapping; Electron trapping; Experimental analysis; Experimental modelling; Fast capacitance; Gallium compounds; Gate dielectrics; MOSFET devices; MOSFETs; Threshold voltage; Threshold-voltage instabilities; β -Ga2O3
• Online Access: View Fulltext in Publisher

 In this paper, we extensively characterize and model the threshold voltage instability in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric. Specifically, (i) the results indicate that the threshold voltage instability originates from electron trapping at gate dielectric border traps close to the Al2O3/β-Ga2O3 interface. (ii) Logarithmic kinetics were detected for both stress and recovery by means of a innovative fast-capacitance experimental setup, over more than seven decades of time; (iii) a generalized model, which is capable of accurately reproducing the experimental results, was proposed to explain this trend. © 2022 Author(s).