Logarithmic trapping and detrapping in β-Ga2O3MOSFETs: Experimental analysis and modeling

Logarithmic trapping and detrapping in β-Ga2O3MOSFETs: Experimental analysis and modeling

In this paper, we extensively characterize and model the threshold voltage instability in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric. Specifically, (i) the results indicate that the threshold voltage instability originates from electron trapping at gate dielectric border traps close to the A...

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Bibliographic Details
Main Authors: Brusaterra, E. (Author), De Santi, C. (Author), Fregolent, M. (Author), Meneghesso, G. (Author), Meneghini, M. (Author), Tetzner, K. (Author), Würfl, J. (Author), Zanoni, E. (Author)
Format: Article
Language:English
Published: American Institute of Physics Inc. 2022
Subjects:
Alumina
Aluminum oxide
Analysis and models
Border traps
Capacitance
Computer circuits
De-trapping
Electron trapping
Experimental analysis
Experimental modelling
Fast capacitance
Gallium compounds
Gate dielectrics
MOSFET devices
MOSFETs
Threshold voltage
Threshold-voltage instabilities
β -Ga2O3
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