Effect of Fluorine and Hydrogen Radical Species on Modified Oxidized Ni(pt)si
NiSi is an attractive material in the production of CMOS devices. The problem with the utilization of NiSi, is that there is no proper method of cleaning the oxide on the surface. Sputtering is the most common method used for the cleaning, but it has its own complications. Dry cleaning methods inclu...
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| Format: | Others |
| Language: | English |
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University of North Texas
2010
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| Online Access: | https://digital.library.unt.edu/ark:/67531/metadc28421/ |