Investigation on the Reliability and Hot Carrier degradation in Advance MOSFET
博士 === 國立中山大學 === 物理學系研究所 === 107 === Since 1960, the world’s the first metal-oxide-semiconductor-field-effect transistors (MOSFETs) were invented by Kahng and Atalla in Bell Lab. The transistor length is 25 μm, and gate oxide thickness is 100nm. Nowadays, MOSFETs have become the dominant devices fo...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/56e373 |