A Study of High-Ge-Content Si0.16Ge0.84 Gate Stack and Selective Oxidation Mechanism by Low Pressure Oxidation
碩士 === 國立交通大學 === 電子研究所 === 107 === In this thesis, we have comprehensively investigated the feasibility in using low pressure oxidation (LPO) process on high-Ge-content (HGC) SiGe for next generation CMOS devices technology, including oxidation behavior, gate stacks, and electrical characteristics...
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| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/hpc26z |