Showing 1 - 20 results of 47 for search 'Chien, Chao-Hsin', query time: 0.27s Refine Results
  1. 1
    論平時、戰時空域使用之法規範
    by CHIEN CHAO HSIN, 簡朝興
    Published 2005
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  2. 2
    Plasma-induced Antenna Effect on the Deep Submicron Devices with Ultrathin Gate Oxides
    by Chien, Chao-Hsin, 簡昭欣
    Published 1997
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  3. 3
    Research on the inspection of width and tilt angle of rectangle type by using a simple incoherent optical-correlator-system
    by Chien chao hsin, 簡朝鑫
    Published 2001
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  4. 4
    A Study of Metal-2D Junction with Edge-Contact and Hexagonal Boron Nitride (hBN) Inserted Single-Layer MoS2 Transistor for Sub-5nm Nodes
    by Li, Chi-Feng, 李齊峰
    Published 2019
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  5. 5
    A Study of Single-Layer Charge Trap MemTransistor with the HfO2 and Al2O3-based Gate Stack on Germanium Substrate for Neural Network
    by Yi, Chin-Ya, 易琴雅
    Published 2019
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  6. 6
    Investigation of HfO2-based Gate Stack on SiGe by Using NH3 Plasma Treatment and High Vacuum Annealing
    by Yu, Cheng-Yu, 游承諭
    Published 2019
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  7. 7
    A Study of Charge Trap MemTransistor Based on the ZrO2-based Gate Stack on p-type Germanium Substrate for AI Neural Network
    by Tsai, Chien-Wei, 蔡健偉
    Published 2019
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  8. 8
    Investigation of P-Type Negative Capacitance Transistor Using Ferroelectric HfAlOx with Remote Nitrogen Plasma Passivation
    by Hsiung, Szu-Yen, 熊思硯
    Published 2019
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  9. 9
    Fabrication of GaAs channel MOSFETs with Hetero-Epitaxial Ge Source/Drain
    by Han, Tsung-Yu, 韓宗佑
    Published 2018
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  10. 10
    A Study of Interfacial Layer with Incorporation of Metal Yttrium Based on the HfO2-based Gate Stack for Germanium Devices
    by Lu,Yu-Hong, 盧昱宏
    Published 2018
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  11. 11
    A Study of High-Ge-Content Si0.16Ge0.84 Gate Stack and Selective Oxidation Mechanism by Low Pressure Oxidation
    by Zhang, Jun-Lin, 張濬麟
    Published 2018
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  12. 12
    A Study of High Performance Metal/GaSb Schottky Junctions by Inserting a TiO2 Layer between Pd and GaSb
    by Chang, Yun-Pin, 張雲斌
    Published 2018
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  13. 13
    Investigations of High-mobility Germanium and Advanced FinFET Structure for 5 nm Node MOSFET Devices
    by Chou, Chen-Han, 周承翰
    Published 2018
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  14. 14
    Research and Development of Process Technologies for GaSb Channel MOSFETs
    by Tsai, Ming-Li, 蔡明利
    Published 2018
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  15. 15
    A Study of Low Interfacial Traps High-k Gate Stacks and Palladium Germanide Formation for Germanium Devices
    by Shih, An-Shih, 石安石
    Published 2016
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  16. 16
    Fabrication of GaSb Channel PMOSFETs with HfO2 as Gate Dielectric and Ni-GaSb Alloy as Source/Drain
    by Ko, Chun-Yu, 柯俊宇
    Published 2016
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  17. 17
    A Study of Microwave-annealed Treatments on Heteroepitaxial Ge-channel MOSFETs
    by Hsu, Chung-Chun, 徐崇浚
    Published 2017
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  18. 18
    Study on Electrical and Chemical Characteristics of Indium Gallium Arsenide MOSFET and FinFET with Atomic-Layer-Deposited Al2O3 Gate Dielectrics
    by Wang, Shin-Yuan, 王信淵
    Published 2018
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  19. 19
    Characterization of Electrochemically Deposited Cu2O/TiO2 Bulk Hetero-Junction
    by Hsu, Wen-Peng, 許文朋
    Published 2009
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  20. 20
    Applications of Oxygen Vacancies and Dipole Layer Engineering on SONOS-type Nonvolatile Memory
    by Chu, Po-Chi, 朱柏錡
    Published 2009
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