Fabrication of GaAs channel MOSFETs with Hetero-Epitaxial Ge Source/Drain
碩士 === 國立交通大學 === 電子研究所 === 106 === In this thesis, we had optimized the hetero-epitaxy of Ge on GaAs surface by systematically investigated the effects of substrate orientation and surface preparation. Hence, we proposed a new structure of GaAs MOSFET having Ge source/drain (S/D) to tackle the intr...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/c9sd59 |