The Investigation of Characteristic for N-Type FinFETs with Different Thicknesses of TaN Metal Gate and Different Fin Numbers
碩士 === 國立高雄大學 === 電機工程學系碩士班 === 103 === With the scaling of device, FinFET has considered as one of the most promising options for future devices to replace planner MOSFETs. N-type tri-gate FinFETs were utilized in this work. The FinFET devices with various TaN thicknesses were used at first to stud...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/72275242059061517411 |