The Impact of the Shallow Trench Isolation on the Reliability of Trigate MOSFET
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === For the continuing scaled down of the device’s size, many problems will be encountered such as short channel effect, random dopant fluctuation, and leakage currents. Several of these problems have been handled well in advanced CMOS technology. Among these,...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/86954388498297361375 |