The Study of High-κ Dielectrics on Ge and Heteroepitaxial Ge-channel MOSFETs on Si Platform
博士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === In this dissertation, we have investigated the feasibility in using Ge as channel material of CMOS devices, including gate stacks, hetero-epitaxial Ge on Si substrate, and advanced device structure. Various high-κ gate stacks on Ge substrates have been demo...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/8czrd7 |