Non-planar Tri-gate Germanium MOSFETs Integrated on Si Platform
博士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === In the past decade, a continuous scaling of MOSFETs dimensions to boost device performance it could be attributed to the well developed Si CMOS technology, which lead to explosive growth in the semiconductor business. As the transistor channel length shrink...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/efa2cb |