Study of Environment Effects and Bias Illumination Stability for Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

碩士 === 國立交通大學 === 電子研究所 === 99 === In recent years, the higher mobility is needed for thin film transistor (TFT) mainly used to twist the liquid crystal for the larger size display. The mobility of traditional amorphous silicon TFT is too low (< 1 cm2/V s), while the amorphous metal...

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Bibliographic Details
Main Authors: Li, Iue-Hen, 李岳恆
Other Authors: Sze, Simon Min
Format: Others
Language:en_US
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/87656447800639375339