Simon Sze

Simon Min Sze, or Shi Min (; 21 March 1936 – 6 November 2023), was a Taiwanese-American electrical engineer. He is best known for inventing the floating-gate MOSFET with Korean electrical engineer Dawon Kahng in 1967. Provided by Wikipedia
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  1. 1
    Study of Resistance Switching Characteristics and Fabrication in TaON Thin Film for Resistive Random Access Memory
    by Chiu,Yi-Chieh, 邱奕介
    Published 2011
    Other Authors: “...Sze, Simon. Min....”
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  2. 2
    Study of Environment Effects and Bias Illumination Stability for Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
    by Li, Iue-Hen, 李岳恆
    Published 2011
    Other Authors: “...Sze, Simon Min...”
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  3. 3
    Study on the Effect of Post-Treatment for Low Dielectric Constant Hydrogen Silsesquioxane
    by Lin, Yung-Long, 林永隆
    Published 1997
    Other Authors: “...Sze Simon-Min, Chang Chun-Yen...”
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  4. 4
    Study of Metal CVD-W, Ti and TiN for ULSI Applications
    by Chang, Hsiung Shih, 張雄世
    Published 1997
    Other Authors: “...Chang Chun-Yen, Sze Simon-Min...”
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