A study on the electrical properties of GaAs channel devices with atomic-layer-deposited Al2O3 gate dielectric
碩士 === 國立交通大學 === 電子研究所 === 99 === In this thesis, we demonstrated that the Fermi level (EF) of GaAs on the surface could be adjusted to the level of the inversion mode via optimizing the surface treatment. With the optimized treatment, the interface state density (Dit) in the middle of energy bandg...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54412949710533894166 |