Applications of Oxygen Vacancies and Dipole Layer Engineering on SONOS-type Nonvolatile Memory
碩士 === 國立交通大學 === 電子工程系所 === 98 === In this thesis, we utilize oxygen vacancies generated by forming gas anneal (FGA) to our HfO2 thin film and nanocrystal memory capacitors. We find out that HfO2 thin film memory capacitors show the highest hysteresis for FGA temperature of 300oC for 1 hour. And Hf...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79612062253799483084 |