The Synthesis of MOCVD Precursor CuII(OCHMeCH2NEt2)2 and Growth of Copper Thin Films

• Main Authors: Wei-Hsuan Kuo, 郭瑋軒
• Other Authors: Chiapyng Lee
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/b44e9r

碩士 === 國立臺灣科技大學 === 化學工程系 === 94 === The volatile copper(II) complex CuII(OCHMeCH2NEt2)2 was synthesized. By the use of this CuII(OCHMeCH2NEt2)2 as a MOCVD precursor, highly conductive, conformal, continuous, nonporous, and pure copper thin films were deposited at various deposition temperatures and deposition times in this study. The successful synthesis and purity of volatile copper(II) complex CuII(OCHMeCH2NEt2)2 were characterized by FTIR. The thermal stability and decomposition temperature found by TGA made the compound a great precursor for Cu CVD. A highly conductive, conformal, continuous, nonporous, and pure copper thin film can be deposited with proper deposition temperature and deposition time. According to experimental results, A copper thin film obtained at 200℃ and a deposition time of 5 minutes had the lowest resistivity of 2.58 ����-cm. A copper thin film was deposited on patterned TaNx/Si substrate at the optimal condition. The step coverage of the copper thin film on sidewall and bottom of the trench was conformal and continuous. According to these results, CuII(OCHMeCH2NEt2)2 is an excellent precursor for the deposition of Cu seed layer.