A New Charge-Pumping Technique and Its Application to Reliability Analysis of Band-to-Band Tunneling-Induced Hot-Carrier Stress
博士 === 國立交通大學 === 電子工程系 === 88 === A new Charge-Pumping(CP) technique is developed to extract the interface-states and oxide-trapped charges in MOSFET''s in this thesis. Based on this new technique, the Band-To-Band Tunneling(BTBT)-ind...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/62766396063248844315 |