Polymethyl methacrylate/hydrogen silsesquioxane bilayer resist electron beam lithography process for etching 25 nm wide magnetic wires

Polymethyl methacrylate/hydrogen silsesquioxane bilayer resist electron beam lithography process for etching 25 nm wide magnetic wires

A method of patterning magnetic metallic thin films is presented using a bilayer polymethyl methacrylate and hydrogen silsesquioxane electron beam lithography resist mask combined with ion beam etching. The bilayer resist process allows for the combination of a high-resolution resist mask with easy...

Full description

Bibliographic Details
Main Authors: Currivan, Jean Anne (Contributor), Siddiqui, Saima Afroz (Contributor), Ahn, Sung-Min (Contributor), Tryputen, Larysa (Contributor), Beach, Geoffrey Stephen (Contributor), Baldo, Marc A. (Contributor), Ross, Caroline A. (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Department of Physics (Contributor), Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor)
Format: Article
Language:English
Published: American Institute of Physics, 2014-11-20T16:27:33Z.
Subjects:
Article
Online Access:Get fulltext

Internet

Get fulltext

Similar Items