Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

We have investigated the surface morphology of electrically stressed AlGaN/GaN high electron mobility transistors using atomic force microscopy and scanning electron microscopy after removing the gate metallization by chemical etching. Changes in surface morphology were correlated with degradation i...

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Main Authors: Makaram, Prashanth (Contributor), Joh, Jungwoo (Contributor), del Alamo, Jesus A. (Contributor), Palacios, Tomas (Contributor), Thompson, Carl V. (Contributor)
Other Authors: MIT Materials Research Laboratory (Contributor), Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor)
Format: Article
Language:English
Published: American Institute of Physics (AIP), 2012-08-27T17:19:52Z.
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