Time evolution of electrical degradation under high-voltage stress in GaN high electron mobility transistors

by Joh, Jungwoo, del Alamo, Jesus A.
Published 2012

RF Power Degradation of GaN High Electron Mobility Transistors

by Joh, Jungwoo, del Alamo, Jesus A.
Published 2012

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

by Joh, Jungwoo, del Alamo, Jesus A.
Published 2010

Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors

by Li, Libing, Joh, Jungwoo, Thompson, Carl V., del Alamo, Jesus A.
Published 2014

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

by Makaram, Prashanth, Joh, Jungwoo, del Alamo, Jesus A., Palacios, Tomas, Thompson, Carl V.
Published 2012

Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs

by Lee, Ethan S, Hurtado, Luis, Joh, Jungwoo, Krishnan, Srikanth, Pendharkar, Sameer, del Alamo, Jesus A
Published 2021

Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature

by Warnock, Shireen M., Lemus, Allison, Joh, Jungwoo, Krishnan, Srikanth, Pendharkar, Sameer, del Alamo, Jesus A
Published 2020

Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

by Joh, Jungwoo, del Alamo, Jesus A., Jimenez, Jose L., Tserng, Hua-Quen, Chou, Tso-Min, Chowdhury, Uttiya
Published 2010

Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors

by Lin, Chung-Han, Merz, T. A., Doutt, D. R., Hetzer, M. J., Joh, Jungwoo, del Alamo, Jesus A., Mishra, U. K., Brillson, L. J.
Published 2010