Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs

Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs

We investigate time-dependent dielectric breakdown (TDDB) in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs) under forward bias AC stress which better emulates real-world operational conditions. To this end, we have performed TDDB experiments across a wide rang...

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Bibliographic Details
Main Authors: Lee, Ethan S (Author), Hurtado, Luis (Author), Joh, Jungwoo (Author), Krishnan, Srikanth (Author), Pendharkar, Sameer (Author), del Alamo, Jesus A (Author)
Other Authors: Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2021-02-18T21:09:10Z.
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