Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs
We investigate time-dependent dielectric breakdown (TDDB) in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs) under forward bias AC stress which better emulates real-world operational conditions. To this end, we have performed TDDB experiments across a wide rang...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE),
2021-02-18T21:09:10Z.
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| Subjects: | |
| Online Access: | Get fulltext |