Randomness and Statistical Laws of Indentation-Induced Pop-Out in Single Crystal Silicon

Randomness and Statistical Laws of Indentation-Induced Pop-Out in Single Crystal Silicon

Randomness and discreteness for appearance of pop-out of the single crystal silicon with a (100) orientation were studied by a self-made indentation device. For a given maximum penetration load, the load Ppo for appearance of pop-out fluctuates in a relatively large range, which makes it hard to stu...

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Bibliographic Details
Main Authors: Chunyang Geng, Shunguang Wan, Lin Zhang, Chengli Shi, Hongwei Zhao, Hu Huang
Format: Article
Language:English
Published: MDPI AG 2013-04-01
Series:Materials
Subjects:
pop-out
single crystal silicon
maximum penetration load
loading/unloading rate
statistic
Online Access:http://www.mdpi.com/1996-1944/6/4/1496

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http://www.mdpi.com/1996-1944/6/4/1496

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