Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In0.53Ga0.47As (InGaAs) active lay...

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Bibliographic Details
Main Authors: N. Daix, E. Uccelli, L. Czornomaz, D. Caimi, C. Rossel, M. Sousa, H. Siegwart, C. Marchiori, J. M. Hartmann, K.-T. Shiu, C.-W. Cheng, M. Krishnan, M. Lofaro, M. Kobayashi, D. Sadana, J. Fompeyrine
Format: Article
Language:English
Published: AIP Publishing LLC 2014-08-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.4893653

Internet

http://dx.doi.org/10.1063/1.4893653

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