High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

Two high-k dielectric materials (Al2O3 and HfO2) were deposited on n-type (100) and (110) InAs surface orientations to investigate physical properties of the oxide/semiconductor interfaces and the interface trap density (Dit). X-ray photoelectron spectroscopy analyses (XPS) for native oxides of (100...

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Bibliographic Details
Main Authors: C. H. Wang, G. Doornbos, G. Astromskas, G. Vellianitis, R. Oxland, M. C. Holland, M. L. Huang, C. H. Lin, C. H. Hsieh, Y. S. Chang, T. L. Lee, Y. Y. Chen, P. Ramvall, E. Lind, W. C. Hsu, L.-E. Wernersson, R. Droopad, M. Passlack, C. H. Diaz
Format: Article
Language:English
Published: AIP Publishing LLC 2014-04-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4871187

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http://dx.doi.org/10.1063/1.4871187

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