Measurements of light absorption efficiency in InSb nanowires

by A. Jurgilaitis, H. Enquist, M. Harb, K. A. Dick, B. M. Borg, R. Nüske, L.-E. Wernersson, J. Larsson
Published 2014-01-01

Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy

by O. Persson, E. Lind, E. Lundgren, J. Rubio-Zuazo, G. R. Castro, L.-E. Wernersson, A. Mikkelsen, R. Timm
Published 2013-07-01

High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

by C. H. Wang, G. Doornbos, G. Astromskas, G. Vellianitis, R. Oxland, M. C. Holland, M. L. Huang, C. H. Lin, C. H. Hsieh, Y. S. Chang, T. L. Lee, Y. Y. Chen, P. Ramvall, E. Lind, W. C. Hsu, L.-E. Wernersson, R. Droopad, M. Passlack, C. H. Diaz
Published 2014-04-01