Performance Evaluation of 14 nm FinFET-Based 6T SRAM Cell Functionality for DC and Transient Circuit Analysis

• Main Authors: Wei Lim, Huei Chaeng Chin, Cheng Siong Lim, Michael Loong Peng Tan
• Format: Article
• Language: English
• Published: Hindawi Limited 2014-01-01
• Series: Journal of Nanomaterials
• Online Access: http://dx.doi.org/10.1155/2014/820763

As the technology node size decreases, the number of static random-access memory (SRAM) cells on a single word line increases. The coupling capacitance will increase with the increase of the load of word line, which reduces the performance of SRAM, more obvious in the SRAM signal delay and the SRAM power usage. The main purpose of this study is to investigate the stability and evaluate the power consumption of a 14 nm gate length FinFET-based 6T SRAM cell functionality for direct current (DC) and transient circuit analysis, namely, in resistor-capacitor (RC) delay. In particular, Berkeley Short-channel IGFET Model-Common Multigate (BSIM-CMG) model is utilized. The simulation of the SRAM model is carried out in HSPICE based on 14 nm process technology. A shorted-gate (SG) mode FinFET is modeled on a silicon on insulator (SOI) substrate. It is tested in terms of functionality and stability. Then, a functional SRAM is simulated with 5 GHz square wave at the input of word line (WL). Ideal square wave and square wave with 100  RC, 5  RC, 1  RC, and 0.5  RC are asserted to the WL and the bit lines (BL&BLB) of SRAM. Voltage at node q and q- is observed. The simulation shows that 1 RC is the minimum square wave that will store correct value in node q and node q-. Thus, this discovery from the research can be used as a modeling platform for circuit designers to explore and improve the SRAM tolerance against RC delay.