Performance Evaluation of 14 nm FinFET-Based 6T SRAM Cell Functionality for DC and Transient Circuit Analysis
As the technology node size decreases, the number of static random-access memory (SRAM) cells on a single word line increases. The coupling capacitance will increase with the increase of the load of word line, which reduces the performance of SRAM, more obvious in the SRAM signal delay and the SRAM...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2014-01-01
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| Series: | Journal of Nanomaterials |
| Online Access: | http://dx.doi.org/10.1155/2014/820763 |