Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis

Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis

Enhancement of two dimensional electron gas (2DEG) concentrations at Al0.3Ga0.7N/GaN hetero interface after a-Si3N4 (SiN) passivation has been investigated from non-destructive High Resolution X-ray Diffraction (HRXRD) analysis, depletion depth and capacitance-voltage (C-V) profile measurement. The...

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Bibliographic Details
Main Authors: Syed Mukulika Dinara, Sanjay Kr. Jana, Saptarsi Ghosh, Partha Mukhopadhyay, Rahul Kumar, Apurba Chakraborty, Sekhar Bhattacharya, Dhrubes Biswas
Format: Article
Language:English
Published: AIP Publishing LLC 2015-04-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4919098

Internet

http://dx.doi.org/10.1063/1.4919098

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