Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis

by Syed Mukulika Dinara, Sanjay Kr. Jana, Saptarsi Ghosh, Partha Mukhopadhyay, Rahul Kumar, Apurba Chakraborty, Sekhar Bhattacharya, Dhrubes Biswas
Published 2015-04-01