Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient
A method to remove the misfit dislocations and reduce the threading dislocations density (TDD) in the germanium (Ge) epilayer growth on a silicon (Si) substrate is presented. The Ge epitaxial film is grown directly on the Si (001) donor wafer using a “three-step growth” approach in a re...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-01-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4905487 |