THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS

THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS

Tungsten carbide (WC/C) layers are often researched due to their outstanding mechanical and tribological properties. Here, optimized indented hardness (HIT), indentation modulus (EIT) and coefficient of friction (COF) values were measured to study the effect of pressure and bias voltage on WC/C laye...

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Bibliographic Details
Main Authors: Peter Hornak, Daniel Kottfer, Kaczmarek Lukasz, Kianicova Marta, Balko Jan, Rehak Frantisek, Pekarcikova Miriam, Ciznar Peter
Format: Article
Language:English
Published: University of Chemistry and Technology, Prague 2017-12-01
Series:Ceramics-Silikáty
Subjects:
WC/C layer
DC magnetron sputtering
N₂+SiH₄
Annealing
Properties
Online Access: http://www.ceramics-silikaty.cz/index.php?page=cs_detail_doi&id=1158

Internet

http://www.ceramics-silikaty.cz/index.php?page=cs_detail_doi&id=1158

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